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| Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 26.00.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < -2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.00.5 2.5 2.00.3 3.00.3 1.00.2 Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -160 -140 -5 -12 -7 120 3.5 150 -55 to +150 Unit V V V A 2.70.3 0.60.2 5.450.3 10.90.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature 1 2 3 A W C C B 1:Base 2:Collector 3:Emitter TOP-3L Package Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h E (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -160V, IE = 0 VCE = -140V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -5V, IC = -1A VCE = -5V, IC = -7A IC = -7A, IB = -7mA IC = -7A, IB = -7mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -7A, IB1 = -7mA, IB2 = 7mA, VCC = -50V 20 1.0 1.5 1.2 -140 2000 5000 30000 -2.5 -3.0 V V MHz s s s min typ max -100 -100 -100 Unit A A A V FE2 Rank classification Q S P 5000 to 15000 7000 to 21000 8000 to 30000 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 -12 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) IB=-2mA -1mA - 0.9mA - 0.8mA - 0.7mA - 0.6mA - 0.5mA -4 - 0.4mA - 0.3mA -2 (3) 0 0 20 40 60 80 100 120 140 160 (2) 0 0 -2 -4 -6 -8 -10 -12 - 0.2mA 2SB1503 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) -10 -30 150 Collector current IC (A) -8 -10 TC=100C 25C -25C -1 100 (1) -6 -3 50 - 0.3 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC 100000 VCE=-5V 1000 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 TC=100C -30 25C 300 10000 -25C -10 100 3000 1000 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -3 TC=-25C -1 100C 25C 30 10 - 0.3 3 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 -1 -3 -10 1 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C Area of safe operation (ASO) -100 -30 ICP Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) 10 3 tstg tf 1 ton 0.3 0.1 0.03 0.01 0 -4 -8 Collector current IC (A) -10 IC -3 -1 10ms DC t=1ms - 0.3 - 0.1 - 0.03 - 0.01 -1 -12 -16 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 1000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1) 2SB1503 Thermal resistance Rth(t) (C/W) 10 (2) 1 0.1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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